• Laser & Optoelectronics Progress
  • Vol. 60, Issue 9, 0923001 (2023)
Zhengyang Li1, Haixia Da1、2、*, and Xiaohong Yan1、2、3
Author Affiliations
  • 1College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210046, Jiangsu, China
  • 2Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China
  • 3School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China
  • show less
    DOI: 10.3788/LOP221017 Cite this Article Set citation alerts
    Zhengyang Li, Haixia Da, Xiaohong Yan. Goos-Hänchen Shifts of Metal Layer and Quasicrystals with Monolayer Graphene[J]. Laser & Optoelectronics Progress, 2023, 60(9): 0923001 Copy Citation Text show less

    Abstract

    Since the magnitudes of the Goos-H?nchen (GH) shifts in multilayered photonic crystals are generally small, it is desirable to find the alternative configurations to achieve the large GH shift. In this work, we investigated the GH shift of the reflected wave in the structure with a metal layer, a dielectric material, and the quasiperiodic photonic crystal by the transfer matrix method, where the quasiperiodic photonic crystal is composed of a dielectric material and monolayer graphene arranged in a Fibonacci sequence. It is found that the GH shift can be enhanced up to 7330 times of the incident wavelength at the specified operating wavelength 2 μm due to the excitation of surface plasmon polaritons of metal. In addition, we discussed the influence of the optical parameters of monolayer graphene, and the thickness of the dielectric material on the GH shift, and confirmed that changing these parameters could achieve the control of GH shift.
    Zhengyang Li, Haixia Da, Xiaohong Yan. Goos-Hänchen Shifts of Metal Layer and Quasicrystals with Monolayer Graphene[J]. Laser & Optoelectronics Progress, 2023, 60(9): 0923001
    Download Citation