Yu-Rong CUI, Yi ZHOU, Min HUANG, Fang-Fang WANG, Zhi-Cheng XU, Jia-Jia XU, Jian-Xin CHEN, Li HE. Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors[J]. Journal of Infrared and Millimeter Waves, 2023, 42(1): 8
- Journal of Infrared and Millimeter Waves
- Vol. 42, Issue 1, 8 (2023)
Fig. 1. Schematic diagrams of InAs/GaSb superlattice detectors：（a）conventional structure device，（b）gate-controlled structure device
Fig. 2. I-V curve of varying area devices with（a）no treatment without annealing，（b）N2O treatment without annealing，（c）N2O treatment with annealing，and（d）pixels with a diameter of 200μm for samples No.1，No.2，and No.3
Fig. 3. Relationship between
Fig. 4. The leakage current on the sidewall surface of samples No. 1 and No. 3（the ordinate of the main graph is a linear coordinate，and the ordinate of the upper right graph is a logarithmic coordinate）
Fig. 5. I-V curves under different gate voltages（a）Sample No. 1，（b）Sample No. 3
Fig. 6. Simulation of side-wall leakage current under 0 gate voltage（a）Sample No. 1，（b）Sample No. 3（the ordinate of the main picture is logarithmic coordinates，and the ordinate of the lower left picture is linear coordinates）
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Table 1. List of devices
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Table 2. Surface resistivities obtained by simulation
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Table 3. Parts of parameters used in the dark current simulation
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Table 4. Surface parallel resistivities and surface charges obtained by simulation
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