• Photonics Research
  • Vol. 9, Issue 5, 749 (2021)
Xiao Hu1、2, Dingyi Wu2, Hongguang Zhang1, Weizhong Li1、2, Daigao Chen1、2, Lei Wang1、2, Xi Xiao1、2、*, and Shaohua Yu1、2
Author Affiliations
  • 1National Information Optoelectronics Innovation Center, China Information and Communication Technologies Group Corporation (CICT), Wuhan 430074, China
  • 2State Key Laboratory of Optical Communication Technologies and Networks, China Information and Communication Technologies Group Corporation (CICT), Wuhan 430074, China
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    DOI: 10.1364/PRJ.417601 Cite this Article Set citation alerts
    Xiao Hu, Dingyi Wu, Hongguang Zhang, Weizhong Li, Daigao Chen, Lei Wang, Xi Xiao, Shaohua Yu. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide[J]. Photonics Research, 2021, 9(5): 749 Copy Citation Text show less
    References

    [1] R. A. Soref. Silicon-based optoelectronics. Proc. IEEE, 81, 1687-1706(1993).

    [2] D. A. B. Miller. Device requirements for optical interconnects to silicon chips. Proc. IEEE, 97, 1166-1185(2009).

    [3] M. Asghari, A. V. Krishnamoorthy. Energy-efficient communication. Nat. Photonics, 5, 268-270(2011).

    [4] D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, G. T. Reed, L. Vivien, D. Marris-Morini, E. Cassan, L. Virot, J. M. Fédéli, J.-M. Hartmann, J. H. Schmid, D. X. Xu, F. Boeuf, P. O’Brien, G. Z. Mashanovich, M. Nedeljkovic. Roadmap on silicon photonics. J. Opt., 18, 073003(2016).

    [5] K. Yamada, T. Tsuchizawa, H. Nishi, R. Kou, T. Hiraki, K. Takeda, H. Fukuda, Y. Ishikawa, K. Wada, T. Yamamoto. High-performance silicon photonics technology for telecommunications applications. Sci. Technol. Adv. Mater., 15, 024603(2014).

    [6] G. Zhang, J. Y. Haw, H. Cai, F. Xu, S. M. Assad, J. F. Fitzsimons, X. Zhou, Y. Zhang, S. Yu, J. Wu, W. Ser, L. C. Kwek, A. Q. Liu. An integrated silicon photonic chip platform for continuous-variable quantum key distribution. Nat. Photonics, 13, 839-842(2019).

    [7] Y. Shen, N. Harris, S. Skirlo, M. Prabhu, T. Baehr-Jones, M. Hochberg, X. Sun, S. Zhao, H. Larochelle, D. Englund, M. Soljačić. Deep learning with coherent nanophotonic circuits. Nat. Photonics, 11, 441-446(2017).

    [8] D. Marpaung, J. Yao, J. Capmany. Integrated microwave photonics. Nat. Photonics, 13, 80-90(2019).

    [9] D. Marris-Morini, V. Vakarin, J. M. Ramirez, Q. Liu, A. Ballabio, J. Frigerio, M. Montesinos, C. Alonso-Ramos, X. Le Roux, S. Serna, D. Benedikovic, D. Chrastina, L. Vivien, G. Isella. Germanium based integrated photonics from near- to mid-infrared applications. Nanophotonics, 7, 1781-1793(2018).

    [10] J. Michel, J. Liu, L. C. Kimerling. High-performance Ge-on-Si photodetectors. Nat. Photonics, 4, 527-534(2010).

    [11] Y. Ishikawa, K. Wada, D. D. Cannan, J. Liu, D. L. Hsin-Chiao, L. C. Kimerling. Strain-induced band gap shrinkage in Ge grown on Si substrate. Appl. Phys. Lett., 82, 2044-2046(2003).

    [12] J. F. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. Cannon, L. C. Kimerling, J. Chen, F. O. Ilday, F. X. Kartner, J. Yasaitis. High-performance, tensile strained Ge p-i-n photodetectors on a Si platform. Appl. Phys. Lett., 87, 103501(2005).

    [13] R. Anthony, D. E. Hagan, D. Genuth-Okon, L. M. Maestro, I. F. Crowe, M. P. Halsall, A. P. Knights. Extended wavelength responsivity of a germanium photodetector integrated with a silicon waveguide exploiting the indirect transition. IEEE J. Sel. Top. Quantum Electron., 26, 3800107(2020).

    [14] H. Chen, M. Galili, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, L. Oxenlowe, J. Van Campenhout, G. Roelken. 100-Gbps RZ data reception in 67-GHz Si-contacted germanium waveguide p-i-n photodetectors. J. Lightwave Technol., 35, 722-726(2017).

    [15] M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, S. Laval. Integration of germanium waveguide photodetectors for intrachip optical interconnects. Opt. Eng., 44, 75402-75406(2005).

    [16] D. Dai, M. Piels, J. E. Bowers. Monolithic germanium/silicon photodetectors with decoupled structures: resonant APDs and UTC photodiodes. IEEE J. Sel. Top. Quantum Electron., 20, 3802214(2014).

    [17] L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, F. Evangelisti. Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si. Appl. Phys. Lett., 72, 3175-3177(1998).

    [18] H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, L. C. Kimerling. High-quality Ge epilayers on Si with low threading-dislocation densities. Appl. Phys. Lett., 75, 2909-2911(1999).

    [19] M. Halbwax, D. Bouchier, V. Yam, D. Debarre, L. H. Nguyen, Y. Zheng, P. Rosner, M. Benamara, H. P. Strunk, C. Clerc. Kinetics of Ge growth at low temperature on Si (001) by ultrahigh vacuum chemical vapor deposition. J. Appl. Phys., 97, 064907(2005).

    [20] J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling, J. Michel. Ge-on-Si optoelectronics. Thin Solid Films, 520, 3354-3360(2012).

    [21] L. Chen, P. Dong, M. Lipson. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. Opt. Express, 16, 11513-11518(2008).

    [22] Z. Huang, J. Oh, J. C. Campbell. Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers. Appl. Phys. Lett., 85, 3286-3288(2004).

    [23] D. Ahn, C. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel. High performance, waveguide integrated Ge photodetectors. Opt. Express, 15, 3916-3921(2007).

    [24] X. Li, L. Peng, Z. Liu, X. Liu, J. Zheng, Y. Zuo, C. Xue, B. Cheng. High-power back-to-back dual-absorption germanium photodetector. Opt. Lett., 45, 1358-1361(2020).

    [25] H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, J. Van Campenhout. High-responsivity low-voltage 28-Gb/s Ge p-i-n photodetector with silicon contacts. J. Lightwave Technol., 33, 820-824(2015).

    [26] H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, W. Yao, L. Shen, G. Roelkens, J. Van Campenhou. −1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt. Express, 24, 4622-4631(2016).

    [27] Z. Liu, F. Yang, W. Wu, H. Cong, J. Zheng, C. Li, C. Xue, B. Cheng, Q. Wang. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth. J. Lightwave Technol., 35, 5306-5310(2017).

    [28] D. Benedikovic, L. Virot, G. Aubin, F. Amar, B. Szelag, B. Karakus, J. M. Hartmann, C. Alonso-Ramos, X. L. Roux, P. Crozat, E. Cassan, D. Marris-Morini, C. Baudot, F. Boeuf, J. M. Fédéli, C. Kopp, L. Vivien. 25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures. Photon. Res., 7, 437-444(2019).

    [29] D. Benedikovic, L. Virot, G. Aubin, J. M. Hartmann, F. Amar, B. Szelag, X. L. Roux, C. Alonso-Ramos, P. Crozat, É. Cassan, D. Marris-Morini, C. Baudot, F. Boeuf, J. M. Fédéli, C. Kopp, L. Vivien. Comprehensive study on chip-integrated germanium PIN photodetectors for energy-efficient silicon interconnects. IEEE J. Sel. Top. Quantum Electron., 56, 8400409(2020).

    [30] L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. E. Melhaoui, E. Cassan, X. L. Roux, D. Pascal, S. Laval. High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide. Opt. Express, 15, 9843-9848(2007).

    [31] C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, P. S. Davids. Ultra compact 45 GHz CMOS compatible germanium waveguide photodiode with low dark current. Opt. Express, 19, 24897-24904(2011).

    [32] J. Cui, Z. Zhou. High-performance Ge-on-Si photodetector with optimized DBR location. Opt. Lett., 42, 5141-5144(2017).

    [33] D. Ahn, L. C. Kimerling, J. Michel. Efficient evanescent wave coupling conditions for waveguide-integrated thin-film Si/Ge photodetectors on silicon-on-insulator/germanium-on-insulator substrates. J. Appl. Phys., 110, 083115(2011).

    [34] M. J. Byrd, E. Timurdogan, Z. Su, C. V. Poulton, M. R. Watts. Mode-evolution-based coupler for high saturation power Ge-on-Si photodetectors. Opt. Lett., 42, 851-854(2017).

    [35] C. H. Henry, R. F. Kazarinov, H. J. Lee, K. J. Orlowsky, L. E. Katz. Low loss Si3N4-SiO2 optical waveguides on Si. Appl. Opt., 26, 2621-2624(1987).

    [36] P. Muñoz, G. Micó, L. A. Bru, D. Pastor, D. Pérez, J. D. Doménech, J. Fernández, R. Baños, B. Gargallo, R. Alemany, A. M. Sánchez, J. M. Cirera, R. Mas, C. Domínguez. Silicon nitride photonic integration platforms for visible, near-infrared and mid-infrared applications. Sensors, 17, 2088(2017).

    [37] C. G. H. Roeloffzen, M. Hoekman, E. J. Klein, L. S. Wevers, R. B. Timens, D. Marchenko, D. Geskus, R. Dekker, A. Alippi, R. Grootjans, A. V. Rees, R. M. Oldenbeuving, J. P. Epping, R. G. Heideman, K. Worhoff, A. Leinse, D. Geuzebroek, E. Schreuder, P. W. L. van Dijk, I. Visscher, C. Taddei, Y. Fan, C. Taballione, Y. Liu, D. Marpaung, L. Zhuang, M. Benelajla, K. J. Boller. Low-loss Si3N4 TriPleX optical waveguides: technology and applications overview. IEEE J. Sel. Top. Quantum Electron., 24, 4400321(2018).

    [38] D. J. Blumenthal, R. Heideman, D. Geuzebroek, A. Leinse, C. Roeloffzen. Silicon nitride in silicon photonics. Proc. IEEE, 106, 2209-2231(2018).

    [39] K. S. Giboney, M. J. W. Rodwell, J. E. Bowers. Travelling-wave photodetector design and measurements. IEEE J. Sel. Top. Quantum Electron., 2, 622-629(1996).

    [40] A. Beling, X. Xie, J. C. Campbell. High-power, high-linearity photodiodes. Optica, 3, 328-338(2016).

    [41] M. Oehme, J. Werner, E. Kasper, M. Jutzi, M. Berroth. High bandwidth Ge p-i-n photodetector integrated on Si. Appl. Phys. Lett., 89, 071117(2006).

    [42] X. Hu, D. Wu, H. Zhang, W. Li, D. Chen, L. Wang, X. Xiao, S. Yu. High-speed lateral PIN germanium photodetector with 4-directional light input. Opt. Express, 28, 38343-38354(2020).

    [43] Y. Zuo, Y. Yu, Y. Zhang, D. Zhou, X. L. Zhang. Integrated high-power germanium photodetectors assisted by light field manipulation. Opt. Lett., 44, 3338-3341(2019).

    Xiao Hu, Dingyi Wu, Hongguang Zhang, Weizhong Li, Daigao Chen, Lei Wang, Xi Xiao, Shaohua Yu. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide[J]. Photonics Research, 2021, 9(5): 749
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