[1] Gary C.TISONE,A.Wayne JOHNSON.Laser-controlled etching of chromium-doped 《100》 GaAs[J].Appl.Phys.Lett,1983,42(6):530-532.
[2] LEE Cheon,TAKAI Mikio,YADA Toshiro,et al.Laser-induced trench etching of GaAs in aqueous KOH solution[J].Appl.Phys.A:Solids and Surfaces,1990,51(4):340-343.
[3] R.J.von GUTFELD,R.T.HODGSON.Laser enhanced etching in KOH[J].Appl.Phys.Lett,1982,40(4):352-354.
[4] LUMR.M,OSTERMAYERF.W.JR,KOHLP.A,et al.Improvements in the modulation amplitude of submicron gratings produced in n-InP by direct photoelectrochemical etching[J].Appl.Phys.Lett,1985,47(3):269-271.
[5] M.S.MINSKY,M.WHITE,E.L.HU.Room-temperature photoenhanced wet etching of GaN[J].Appl.Phys.Lett,1996,68(11):1531-1533.
[6] S.MAILIS,G.W.ROSS,L.REEKIE.Fabrication of surface relief gratings on lithium niobate by combined UV laser and wet etching[J].Electronics Letters,2000,36(21):1801-1803.
[7] T.Robert BROWN.Laser-assisted selective chemical etching for active trimming of GaAs waveguide devices[J].IEEE Photonics Technology Letters,1990,5(2):346-348.
[8] C.Angulo BARRIOS,E.RODRIGUEZ,M.HOLMGREN.GaAs/AlGaAs Buried Heterostructure Laser by Wet Etching and Semi-insulating GaInP:Fe Regrowth[J].Electrochemical and Solid-State Letters,2000,3(9):439-441.
[9] Dragan V.PODLESNIK,Heinz H.GILGEN,Richard M.OSGOOD,et al.Waveguiding effects in laser-induced aqueous etching of semiconductors[J].Appl.Phys.Lett,1986,48 (7):496-498.
[10] KHARE Reena,HU Evelyn L.Dopant selective photoelectrochemical etching of GaAs homostructures[J].Journal of theElectrochemical Society,1991,138(5):1516-1519.
