Passive Mode-Llocking of Nd:YAG Laser by Monocrystalline Silicon

[in Chinese]; [in Chinese]; [in Chinese]

[1] U. Keller. Ultrafast all-solid-state laser technology. Appl. Phys. B, 1994, 58(3): 347～363

[2] K. V. Yumashev, V. P. Mikhailov, I. V. Bondar′ et al.. Passive mode locking of neodymium lasers using glasses with CuInS2xSe2(1-x) microcrystallites. Quant. Electron., 1993, 23(9): 772～774

[3] Zhuhong Zhang, Liejia Qian, Dianyuan Fan et al.. Gallium. arsenide: A new material to accomplish passively mode-locked Nd:YAG laser. Appl. Phys. Lett., 1992, 60(4): 419～421

[4] Zhuhong Zhang et al.. in Conference on Lasers and Electro-Optics, Optical Society of America, Washington, D. C., 1992, paper CTUK47

[5] H. Bergner, V. Bruckner. On the investigation of laser-induceded carriers in silicon in the picosecond time range. Optical and Quantum Electronics, 1983, 15(5): 477～485

[6] I. C. Khoo, Ping Zhou, R. G. Lindquist et al.. Quantitative analysis of picosecond transient multiwave-mixing-mediated beam-amplification effectsinsilicon. Phys. Rev. (A), 1990, 41(1): 408～413

[7] B. Wilhelmi, J. Herrmann. Coherent interaction effects in probe pulse experiments. Sov. J. Quant. Electron., 1980, 10(9): 1082～1087

[8] V. L. Vinetskii, N. V. Kukhatarev, M. S. Soskin. Transformation of intensities and phases of light beams by a transient “undisplaced” holographic gratings. Sov. J. Quant. Electron., 1977, 7(2): 230～233