• Frontiers of Optoelectronics
  • Vol. 9, Issue 2, 306 (2016)
Zhuo DENG1, Jiqiang NING1、2, Rongxin WANG, Zhicheng SU1, Shijie XU1、*, Zheng XING2, Shulong LU2, Jianrong DONG2, and Hui YANG2
Author Affiliations
  • 1Department of Physics, HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • show less
    DOI: 10.1007/s12200-016-0599-y Cite this Article
    Zhuo DENG, Jiqiang NING, Rongxin WANG, Zhicheng SU, Shijie XU, Zheng XING, Shulong LU, Jianrong DONG, Hui YANG. Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell[J]. Frontiers of Optoelectronics, 2016, 9(2): 306 Copy Citation Text show less
    References

    [1] Cotal H, Fetzer C, Boisvert J, Kinsey G, King R, Hebert P, Yoon H, Karam N. III–V multijunction solar cells for concentrating photovoltaics. Energy & Environmental Science, 2009, 2(2): 174– 192

    [2] Leite M S,Woo R L, Munday J N, HongWD, Mesropian S, Law D C, Atwater H A. Towards an optimized all lattice-matched InAlAs/ InGaAsP/InGaAs multijunction solar cell with efficiency>50%. Applied Physics Letters, 2013, 102(3): 033901

    [3] Fraunhofer I S E. World record solar cell with 44.7% efficiency. 2013, November 11. www.sciencedaily.com/releases/2013/09/ 130923204214.htm

    [4] Takamoto T, Ikeda E, Kurita H, Ohmori M. Over 30% efficient InGaP/GaAs tandem solar cells. Applied Physics Letters, 1997, 70 (3): 381

    [5] YangMJ, Yamaguchi M, Takamoto T, Ikeda E, Kurita E H, Ohmori M. Photoluminescence analysis of InGaP top cells for highefficiency multi-junction solar cells. Solar Energy Materials and Solar Cells, 1997, 45(4): 331–339

    [6] King R R, Fetzer C M, Colter P C, Edmondson K M, Ermer J H, Cotal H L, Hojun Y, Stavrides A P, Kinsey G, Krut D D, Karam N H. High-efficiency space and terrestrial multijunction solar cells through bandgap control in cell structures. In: Proceedings of Photovoltaic Specialists Conference, Conference Record of the Twenty-Ninth IEEE. 2002, 776–781

    [7] Xiong K L, Lu S L, Dong J R, Zhou T F, Jiang D S,Wang R X, Yang H. Light-splitting photovoltaic system utilizing two dual-junction solar cells. Solar Energy, 2010, 84(12): 1975–1978

    [8] Deng Z,Wang R X, Ning J Q, Zheng C C, Bao W, Xu S J, Zhang X D, Lu S L, Dong J R, Zhang B S, Yang H. Radiative recombination of carriers in the GaxIn1 – xP/GaAs double-junction tandem solar cells. Solar Energy Materials and Solar Cells, 2013, 111: 102–106

    [9] Deng Z, Wang R X, Ning J Q, Zheng C C, Xu S J, Xing Z, Lu S L, Dong J R, Zhang B S, Yang H. Super transverse diffusion of minority carriers in GaxIn1 – xP/GaAs double-junction tandem solar cells. Solar Energy, 2014, 110: 214–220

    [10] Meusel M, Baur C, Le’tay G, Bett A W, Warta W, Fernandez E. Spectral response measurements of monolithic GaInP/Ga(In)As/Ge triple-junction solar cells: measurement artifacts and their explanation. Progress in Photovoltaics: Research and Applications, 2003, 11 (8): 499–514

    [11] King D L, Hansen B R, Moore J M, Aiken D J. New methods for measuring performance of monolithic multi-junction solar cells. In: Proceedings of Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE. 2000, 1197–1201

    [12] Najda S P, Dawson M D, Duggan G. Bias and temperaturedependent photocurrent spectroscopy of a compressively strained GaInP/AlGaInP single quantum well. Semiconductor Science and Technology, 1995, 10(4): 433–436

    [13] Varshni Y P. Temperature dependence of the energy gap in semiconductors. Physica, 1967, 34(1): 149–154

    [14] Deng Z, Ning J Q, Su Z C, Xu S J, Xing Z,Wang R X, Lu S L, Dong J R, Zhang B S, Yang H. Structural dependences of localization and recombination of photogenerated carriers in the top GaInP subcells of GaInP/GaAs double-junction tandem solar cells. ACS Applied Materials & Interfaces, 2015, 7(1): 690–695

    [15] Kawasaki K, Tanigawa K, Fujiwara K. Tunneling effects on temperature-dependent photocurrent intensity in InxGa1 – x As multiple-quantum-well diodes. In: Proceedings of IEEE Conference on Optoelectronic and Microelectronic Materials and Devices. 2006, 302–304

    [16] Wang J, Zheng C, Ning J, Zhang L, Li W, Ni Z, Chen Y,Wang J, Xu S. Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure. Scientific Reports, 2015, 5: 7687

    [17] Streetman B G, Banerjee S K. Solid State Electronic Devices.New Jersey: Prentice Hall, 2009

    Zhuo DENG, Jiqiang NING, Rongxin WANG, Zhicheng SU, Shijie XU, Zheng XING, Shulong LU, Jianrong DONG, Hui YANG. Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell[J]. Frontiers of Optoelectronics, 2016, 9(2): 306
    Download Citation