• Frontiers of Optoelectronics
  • Vol. 9, Issue 2, 306 (2016)
Zhuo DENG1, Jiqiang NING1、2, Rongxin WANG, Zhicheng SU1, Shijie XU1、*, Zheng XING2, Shulong LU2, Jianrong DONG2, and Hui YANG2
Author Affiliations
  • 1Department of Physics, HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    DOI: 10.1007/s12200-016-0599-y Cite this Article
    Zhuo DENG, Jiqiang NING, Rongxin WANG, Zhicheng SU, Shijie XU, Zheng XING, Shulong LU, Jianrong DONG, Hui YANG. Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell[J]. Frontiers of Optoelectronics, 2016, 9(2): 306 Copy Citation Text show less

    Abstract

    In this paper, influence of temperature and reverse bias on photocurrent spectrum and spectral response of a monolithic GaInP/GaAs double-junction solar cell was investigated in detail. Two sharp spectral response offsets, corresponding to the bandedge photo absorption of the bottom GaAs and the top GaInP subcells, respectively, show the starting response points of individual subcells. More interestingly, the cell photocurrent was found to enhance significantly with increasing the temperature. In addition, the cell photocurrent also increases obviously as the reverse bias voltage increases. The integrated photocurrent intensity of the top GaInP subcell was particularly addressed. A theoretical model was proposed to simulate the reverse bias dependence of the integrated photocurrent of the GaInP subcell at different temperatures.
    Zhuo DENG, Jiqiang NING, Rongxin WANG, Zhicheng SU, Shijie XU, Zheng XING, Shulong LU, Jianrong DONG, Hui YANG. Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell[J]. Frontiers of Optoelectronics, 2016, 9(2): 306
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