Application of Graded Heterojunction in HB-LED and Its Realizing Technique

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 6 >Page 689 > Article

Chinese Journal of Quantum Electronics
Vol. 20, Issue 6, 689 (2003)

Application of Graded Heterojunction in HB-LED and Its Realizing Technique

[in Chinese]^1、*, [in Chinese]², and [in Chinese]³

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Application of Graded Heterojunction in HB-LED and Its Realizing Technique[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 689 Copy Citation Text

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Abstract

Graded heterojunctions with different grading way and different doping density were analysized to show the spike at the heterojunction which can be removed or decreased to improve the performance of HB-LED. We discussed the problems that were met when we applied the double abrupt-hetero layer to fit the grading heterojunction in HB-LED.

Keywords

AlGaInP graded heterojunction LED

[in Chinese], [in Chinese], [in Chinese]. Application of Graded Heterojunction in HB-LED and Its Realizing Technique[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 689

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