HgCdTe APDis one ofthe developingtrends ofthirdgeneration inferredFPAdetectors. In this paper. we report the result on a16×16 arrays ofHgCdTe avalanche photodiode with3.56 μmcut-off wavelength. The operability in gain exceeds 90% and relative gain dispersion is lower than 20%. NEPh is about 60 at 6 V bias with excess noise factor closeto 1.2.