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    Journals >Chinese Journal of Lasers >Volume 13 >Issue 7 >Page 401 > Article
    • Chinese Journal of Lasers
    • Vol. 13, Issue 7, 401 (1986)
    Light-activated GaAs/GaAlAs heterostructure negative resistance lasers
    Zhang Quansheng, Wu Ronghan, and Li Zhaoyin
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    Zhang Quansheng, Wu Ronghan, Li Zhaoyin. Light-activated GaAs/GaAlAs heterostructure negative resistance lasers[J]. Chinese Journal of Lasers, 1986, 13(7): 401 Copy Citation Text show less

    Abstract

    A light-activated GaAs/GaAlAs heterostructure negative resistance laser has been made by horizontal liquid-phase epitaxial growth. The operation principle and some of the characteristics of the device are described.
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    Zhang Quansheng, Wu Ronghan, Li Zhaoyin. Light-activated GaAs/GaAlAs heterostructure negative resistance lasers[J]. Chinese Journal of Lasers, 1986, 13(7): 401
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    Paper Information
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