• Infrared and Laser Engineering
  • Vol. 37, Issue 2, 189 (2008)
[in Chinese]*, [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Present situation of investigations and applications in high power semiconductor lasers[J]. Infrared and Laser Engineering, 2008, 37(2): 189 Copy Citation Text show less
    References

    [1] U H X,CHYR I,JIN X,et al.>700 W continuous-wave output power from single laser diode bar[J].Electronics Letters,2007,43(1):27-28.

    [2] KANSKAR M,EARI ES T,GOODNOUGH T J,et al.73% CW power conversion efficiency at 50 W from 970 nnl diode laser bars[J].Electronics Letters,2005,41(5):226-227.

    [3] KNIGGE A,ERBERT G,JONSSON J,et al.Passively cooled 940 nm laser bars with 73%wall-plug efficiency at 70 W and 25℃[J].Electronics Letters,2005,41(5):246-247.

    [4] FANG G Z,XIAO J W,MA X Y,et al.High power 808 nm AIGaAs/GaAs quantum well laser diodes with broad waveguide[J].Chinese Journal of Semiconductors,2002,23(8):809-812.

    [5] WANG X W,XIAO J W,WANG Z M,et al.High brightness,high power density fiber coupling of high power laser diode[J].Chinese Journal of Semiconductors,2001,22(9):1112-1115.

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    [in Chinese], [in Chinese], [in Chinese]. Present situation of investigations and applications in high power semiconductor lasers[J]. Infrared and Laser Engineering, 2008, 37(2): 189
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