• Acta Photonica Sinica
  • Vol. 47, Issue 1, 125001 (2018)
WU Jia-jun1、*, XIE Sheng1, MAO Lu-hong2, and ZHU Shuai-yu1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/gzxb20184701.0125001 Cite this Article
    WU Jia-jun, XIE Sheng, MAO Lu-hong, ZHU Shuai-yu. Single Photon Avalanche Diode with Non-contact Guard Ring Based on CMOS Technology[J]. Acta Photonica Sinica, 2018, 47(1): 125001 Copy Citation Text show less
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    [9] VEERAPPAN C, CHARBON E. A low dark count p-i-n diode based SPAD in CMOS technology[J]. IEEE Transactions on Electron Devices, 2015, 63(1): 65-71.

    [10] WANG Wei, BAO Xiao-yuan, CHEN Li, et al. A CMOS single photon avalanche diode device with high photon detection efficiency[J]. Acta Photonica Sinica, 2016, 45(8): 0823001.

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    [1] XU Ming-zhu, ZHANG Yu, XIA Cui-yun, LU Xin-miao, XU Jiang-tao. Single Photon Avalanche Diode with Double Charge Layers Based on Standard CMOS Process[J]. Acta Photonica Sinica, 2019, 48(7): 704002

    WU Jia-jun, XIE Sheng, MAO Lu-hong, ZHU Shuai-yu. Single Photon Avalanche Diode with Non-contact Guard Ring Based on CMOS Technology[J]. Acta Photonica Sinica, 2018, 47(1): 125001
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