Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy

XU Qing-Qing; CHEN Jian-Xin; ZHOU Yi; LI Tian-Xing; LV Xiang; HE Li

Journals >Journal of Infrared and Millimeter Waves >Volume 30 >Issue 5 >Page 406 > Article

Journal of Infrared and Millimeter Waves
Vol. 30, Issue 5, 406 (2011)

Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy

XU Qing-Qing^*, CHEN Jian-Xin, ZHOU Yi, LI Tian-Xing, LV Xiang, and HE Li

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[in Chinese]

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XU Qing-Qing, CHEN Jian-Xin, ZHOU Yi, LI Tian-Xing, LV Xiang, HE Li. Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2011, 30(5): 406 Copy Citation Text

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References

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[2] Smith D L, Maihiot C. Proposal for strained type Ⅱ supperlattice infrared detectors[J]. J. Appl. Phys.,1987,62:2545-2548.

[3] Johnson J L, Samoska L A, Gossard A C, et al. Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb supperlattice in heterojunctions with GaSb[J]. J. Appl. Phys.,1996,80:1116-1127.

[4] Razeghi M, Wei Y, Bae J, et al. Type Ⅱ InAs/GaSb superlattices for high-performance photodiodes and FPAs[J]. Proceedings of SPIE the Internation Society for Optical Engineering,2003,5246:501-511.

[5] Rogalski A. Material consideration for third generation infrared photon detectors[J]. Infrared Physics and Technology,2007,50:240-252.

[6] Bracker A S, Yang M J, Bennett BR, et al. Surface reconstruction phase diagrams for InAs, AlSb, and GaSb[J]. Journal of Crystal Growth,2000,220:384-392.

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