[1] Hua Lingling, Zhang Peng, Zhang Xiao et al.. Calculation of band offset ratio of strained quantum wells［J］. China Science and Technology Information, 2009, (6): 44～45

[2] Song Yanrong, Guo Xiaoping, Wang Yonggang et al.. An novel laser: optically pumped vertical external cavity surface emission laser［J］. Acta Photonica Sinica, 2005, 34(10): 1448～1450

[3] Ni Yanhai. Study on Novel Optically-Pumped Vertical-External-Cavity Surface-Emitting Lasers［D］. Chongqing: Chongqing Normal University, 2011. 1～15

[4] Liu Xiangnan, Wang Xiaohua, Wang Fei et al.. Analysis of thermal characteristic in optically pumped semiconductor vertical-external-cavity surface-emitting laser with double heatspreaders ［J］ . Laser & Optoelectronics Progress, 2011, 48(9): 091404

[5] Zhang Peng, Yu Weiming, Song Yanrong et al.. Semiconductor saturable absorber mirror mode-locked optically pumped vertical-external-cavity surface-emitting semiconductor lasers［J］. Laser & Optoelectronics Progress, 2006, 43(6): 52～57

[6] Chen Baizhong, Dai Teli, Liang Yiping et al.. Finite element analysis of thermal management in optical pumping semiconductor vertical-external cavity surface-emitting laser ［J］. Chinese J. Lasers, 2009, 36(10): 2745～2750

[7] C. G. Van de Walle. Band lineups and deformation potentials in the model-solid theory［J］. Phys. Rev. B, 1989, 39(3): 1871～1883

[8] W. A. Harrison. Elementary theory of heterojunctions［J］. J. Vac. Sci. Technol., 1997, 14(4): 1016～1021

[9] Song Yanrong, Hua Lingling, Zhang Peng et al.. Calculation of band structure of InGaAs/GaAs strained quantum wells［J］. J. BeiJing University of Technology, 2011, 37(4): 565～569

[10] Hua Lingling, Song Yanrong, Zhang Peng et al.. Study on the gain characteristics of optically pumped semiconductor laser［J］. Acta Optica Sinica, 2010, 30(6): 1702～1708

[11] Peng Zhang, Yanrong Song, Jinrong Tian et al.. Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers［J］. J. Appl. Phys., 2009, 105(5): 053103

[12] Wang Xuerong, Wei Liping, Zheng Huibao et al.. Al contents of AlxGa1-xN epitaxial films studied by photominesecence technique［J］. Laser & Optoelectronics Progress, 2012, 49(5): 051601

[13] Zhang Yan, Ning Yongqiang, Zhang Jinsheng et al.. Structural design of 808 nm InGaAlAs vertical cavity surface emitting laser［J］. Chinese J. Lasers, 2011, 38(9): 0902007

[14] J. P. Reithmaier, R. Hoger, H. Riechert et al.. Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering［J］. Appl. Phys. Lett., 1990, 56(6): 536～538

[15] S. Niki, C. L. Lin, W. S. C. Chang et al.. Band-edge discontinuities of strained-layer InxGa1-xAs/GaAs heterojunctions and quantum wells［J］. Appl. Phys. Lett., 1989, 55(13): 1339～1341

[16] N. Debbar, Dipankar Biswas, Pallab Bhattacharya. Conduction-band offsets in pseudomorphic InxGa1-xAs/Al0.2Ga0.8As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopy［J］. Phys. Rev. B, 1989, 40(2): 1058～1063