• Chinese Journal of Lasers
  • Vol. 30, Issue 4, 345 (2003)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigations on the Relations between Crystal Structure and Electrical Properties of ZrO2 Thin Films[J]. Chinese Journal of Lasers, 2003, 30(4): 345 Copy Citation Text show less

    Abstract

    ZrO 2 thin films were deposited on Pt/Ti/SiO 2/Si and SiO 2/Si substrates by pulsed laser deposition (PLD), respectively. Spreading resistance profile (SRP) was used to study the resistivity distribution across the ZrO 2 thin films. The relations between the crystal structure and substrate temperature were tested, using X ray diffraction (XRD). The surface roughness of ZrO 2 thin films is measured accurately and the influence of the crystal structure of the ZrO 2 thin films on their electrical I-V characteristics is birefly discussed.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigations on the Relations between Crystal Structure and Electrical Properties of ZrO2 Thin Films[J]. Chinese Journal of Lasers, 2003, 30(4): 345
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