• Journal of Infrared and Millimeter Waves
  • Vol. 33, Issue 4, 391 (2014)
ZHANG Li-Yao1、2、*, QIAO Hui1, and LI Xiang-Yang1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3724/sp.j.1010.2014.00391 Cite this Article
    ZHANG Li-Yao, QIAO Hui, LI Xiang-Yang. Reducing the surface recombination velocity of N-HgCdTe by second anodization[J]. Journal of Infrared and Millimeter Waves, 2014, 33(4): 391 Copy Citation Text show less
    References

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    [2] Nemirovsky Y, Bahir G. Passivation of mercury cadmium telluride surfaces[J]. J. Vac. Sci. Technol. 1989,7(2): 450-459.

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    [8] Lee S H, Shin H C, Lee H C, et al. New surface treatment method for improving the interface characteristics of Cd/Hg1-xCdxTe heterostructure[J]. Electron. Mater. 1997,26(6): 556-560.

    [10] Petersen P E. Auger recombination in Hg1-xCdxTe [J]. Appl. Phys. 1970, 41(8): 34-65.

    [11] Reine M B, Maschhoff K R, Tobin S P, et al. The impact of characterization techniques on HgCdTe infrared detector technology[J].Semiconductor.Sci.Technol. 1993,8: 788-804.

    ZHANG Li-Yao, QIAO Hui, LI Xiang-Yang. Reducing the surface recombination velocity of N-HgCdTe by second anodization[J]. Journal of Infrared and Millimeter Waves, 2014, 33(4): 391
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