Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 36 >Issue 4 >Page 595 > Article

Acta Photonica Sinica
Vol. 36, Issue 4, 595 (2007)

Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction

[in Chinese]^1、2, [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction[J]. Acta Photonica Sinica, 2007, 36(4): 595 Copy Citation Text

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References

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[5] HE L,WU Y,CHEN L,et al.Composition control and surface defects of MBE-grown HgCdTe[J].Journal of Crystal Growth,2001:227-228,677-682.

[7] DEWAMES R E,WILLIAMS G M,PASKO J G,et al.Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation[J].Journal of Crystal Growth,1988,86(1-4):849-858.

[9] BAJAJ J,TENNANT W E,ZUCCA R,et al.Spatially resolved characterization of HgCdTe materials and devices by scanning laser microscopy[J].Semiconductor Science Technology,1993,8(6S):872-887.

[10] MUSCA C A,REDFERN D A,SMITH E P G,et al.Junction depth measurement in HgCdTe using laser beam induced current[J].Journal of Electronics Material,1999,28 (6):603-610.

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