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    Journals >Acta Photonica Sinica >Volume 36 >Issue 4 >Page 595 > Article
    • Acta Photonica Sinica
    • Vol. 36, Issue 4, 595 (2007)
    Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction
    [in Chinese]1、2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction[J]. Acta Photonica Sinica, 2007, 36(4): 595 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction[J]. Acta Photonica Sinica, 2007, 36(4): 595
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