Junwei Li, Chengying Shi, Zujun Wang, Yuanyuan Xue. Theoretical Simulation on Degradation of GaAs Sub-Cells Induced by Proton Irradiation with Different Energies[J]. Acta Optica Sinica, 2021, 41(5): 0516003
- Acta Optica Sinica
- Vol. 41, Issue 5, 0516003 (2021)
Fig. 1. Structure model of GaAs sub-cell
Fig. 2. Degradation results of normalized maximum power of GaAs sub-cell irradiated by 5 MeV and 10 MeV protons versus proton fluence
Fig. 3. Degradation results of normalized short-circuit current density of GaAs sub-cell versus proton fluence for different irradiation energies
Fig. 4. Schematic of photon absorption in active region of GaAs sub-cell
Fig. 5. Degradation results of normalized open voltage of GaAs sub-cell versus proton fluence for different irradiation energies
Fig. 6. Degradation results of normalized fill factor of GaAs sub-cell versus proton fluence for different irradiation energies
Fig. 7. Degradation results of normalized maximum power of GaAs sub-cell versus proton fluence for different irradiation energies
Fig. 8. Degradation result of normalized maximum power of GaAs sub-cell versus displacement damage dose
Fig. 9. External quantum efficiencies of GaAs sub-cell for different proton irradiation energies when proton fluence is 1×1013 cm-2
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Table 1. Related physical parameters of GaAs in simulation
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Table 2. Deep-level defects of proton irradiated GaAs sub-cell obtained by DLTS measurement[13]
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