• Chinese Journal of Quantum Electronics
  • Vol. 17, Issue 2, 185 (2000)
[in Chinese] and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese]. A Study on Energy-level Structure of Nanometer Sized a-Si3N4[J]. Chinese Journal of Quantum Electronics, 2000, 17(2): 185 Copy Citation Text show less
    References

    [2] Robertson J. The electronic and atomic structure of hydrogenated amorphous Si-Nalloys. Philos. Mag. B, 1991, 63: 47

    [5] Karcher R, Ley L et al. Electronic structure of hydrogenated and unhydrogenatedamorphous SiNx, a photoemission study. Phys. Rev., 1994, B30: 1896

    [6] Meauder R et al. Conduction-band tail width and minimum metallic conductivity ina-SixN1-x: H films studied by photoconduction and opticalabsorption. Phil. May. B, 1984, 50: 63

    [in Chinese], [in Chinese]. A Study on Energy-level Structure of Nanometer Sized a-Si3N4[J]. Chinese Journal of Quantum Electronics, 2000, 17(2): 185
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