High Energy Gamma Irradiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 17 >Issue 3 >Page 265 > Article

Chinese Journal of Quantum Electronics
Vol. 17, Issue 3, 265 (2000)

High Energy Gamma Irradiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Energy Gamma Irradiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors[J]. Chinese Journal of Quantum Electronics, 2000, 17(3): 265 Copy Citation Text

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Abstract

This paper reports theeffects of high energy gamma irradiation on the performance of QWIP. The dose ranged from1mrads to 16mrads. The dark current and spectral response of these radiated devices weremeasured at different dose levels. The detector performance becomes worse with increasingdose.

Keywords

gamma irradiation infraredphotodetector multiple quantum well

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