• Chinese Journal of Quantum Electronics
  • Vol. 27, Issue 6, 711 (2010)
Hai-xin WU*, Fei HUANG, You-bao NI, Zhen-you WANG, Lin CHEN, and Gan-chao CHENG
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    WU Hai-xin, HUANG Fei, NI You-bao, WANG Zhen-you, CHEN Lin, CHENG Gan-chao. Growth and optical properties of mid- and far-IR nonlinear crystal material CdSe[J]. Chinese Journal of Quantum Electronics, 2010, 27(6): 711 Copy Citation Text show less
    References

    [1] Chen W D, Cousin J, Poullet E, et al. Continuous-wave mid-infrared laser sources based on difference frequency generation [J]. Comptes Rendus Physique, 2007, 8: 1129-1150.

    [2] David N N. Nonlinear Optical Crystals: A Complete Survey [M]. New York: Springer, 2005: 108-113.

    [3] Vodopyanov K L. Mid-infrared optical parametric generator with extra-wide (3~19μm) tunability: applications for spectroscopy of two-dimensional electrons in quantum wells [J]. Journal of the Optical Society of America B, 1999, 1(19): 1579-1586.

    [4] Vodopyanov K L. Megawatt peak power 8~13μm CdSe optical parametric generator pumped at 2.8μm [J]. Optics Communications, 1998, 150: 210-212.

    [5] http://www.sttic.com.ru/lpcbc/DANDP/cdse- adv.html.

    [6] Kolesnikov N N, James R B, et al. HPVB and HPVZM shaped growth of CdZnTe, CdSe and ZnSe crystals [C]. Proc. of SPIE, 2002, 4784: 93-104.

    [7] Steininger J. Gowth of CdSe single crystals by temperature gradient solution zoning in excess Se [J]. Materials Research Bulletin, 1968, 3(7): 595-598.

    [8] Manfredotti C, Rizzo A, et al. Effects of traps on the acoustoelectric properties of photoconducting CdSe [J]. Physica Status Solidi, 1972, 12: 163-168.

    [10] Tochitsky S Y, Petukhov V O, Gorobets V A, et al. Efficient continuous-wave frequency doubling of a tunable CO2 laser in AgGaSe2 [J]. Appl. Opt., 1997, 36: 1882-1888.

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    WU Hai-xin, HUANG Fei, NI You-bao, WANG Zhen-you, CHEN Lin, CHENG Gan-chao. Growth and optical properties of mid- and far-IR nonlinear crystal material CdSe[J]. Chinese Journal of Quantum Electronics, 2010, 27(6): 711
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