Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films

Sipeng Gu; Lisong Hou; Qitao Zhao; Rui’an Huang

Journals >Chinese Optics Letters >Volume 1 >Issue 12 >Page 12716 > Article

Chinese Optics Letters
Vol. 1, Issue 12, 12716 (2003)

Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films

Sipeng Gu^1、2、*, Lisong Hou¹, Qitao Zhao¹, and Rui’an Huang¹

Author Affiliations

¹Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800

²Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102, USA

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Sipeng Gu, Lisong Hou, Qitao Zhao, Rui’an Huang. Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films[J]. Chinese Optics Letters, 2003, 1(12): 12716 Copy Citation Text

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Abstract

To improve the optical storage performance, Sn was doped into Ge_(2)Sb_(2)Te_(5) phase change thin films. The optical and thermal properties of Sn-doped Ge_(2)Sb_(2)Te_(5) film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge_(2)Sb_(2)Te_(5) media.

Keywords

210.4810 210.0210 optical data storage optical storage-recording materials

Sipeng Gu, Lisong Hou, Qitao Zhao, Rui’an Huang. Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films[J]. Chinese Optics Letters, 2003, 1(12): 12716

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