Aoqi Fang, Weiling Guo, Hao Xu, Jie Deng, Jiaxin Chen, Jie Sun. Power Light-Emitting Diode with Novel Electrode Structure[J]. Acta Optica Sinica, 2022, 42(19): 1923003
- Acta Optica Sinica
- Vol. 42, Issue 19, 1923003 (2022)
Fig. 1. Profile diagram of preparation process of GaN-based LED. (a) Etching N electrode step; (b) depositing CBL and preparing ITO layer; (c) preparing passivation layer and etching electrode window; (d) preparing metal electrode
Fig. 2. Microscope image of LED with discontinuous ohmic contact P/N electrode and structural diagram of CBL. (a) Microscope image of LED with discontinuous ohmic contact P/N electrode; (b) structural diagram of continuous CBL structure; (c) structural diagram of discontinuous CBL structure
Fig. 3. EQE and WPE of LED I and LED II varying with current
Fig. 4. EQE and WPE of LED I and LED VII varying with current
Fig. 5. EQE and WPE of LED I and LED VI varying with current
Fig. 6. EQE and WPE of LED III and LED V varying with current
Fig. 7. EQE and WPE of LED III and LED IV varying with current
Fig. 8. EQE and WPE of LED with 7 different electrode structures varying with current. (a) EQE; (b) WPE
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Table 1. Structure information and numbering of devices
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