• Journal of Infrared and Millimeter Waves
  • Vol. 20, Issue 3, 179 (2001)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. FEMTOSECOND PHOTO-CONDUCTIVE CHARACTERISTICS OF LT-GaAs[J]. Journal of Infrared and Millimeter Waves, 2001, 20(3): 179 Copy Citation Text show less
    References

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    [2] Zamdmer N,Hu Q, Verghese S,et al. Mode-discriminating photoconductor and coplanar waveguide circuit for picosecond sampling. Appl.Phys.Lett.,1999,74: 1039

    [3] Zhou X,Alexandrou S,Hsiang T Y. Monte Carlo investigation of the intrinsic mechanism of subpicosecond pulse generation by nonuniform illumination.J.Appl.Phys.,1995,77: 706

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    [5] Frankel M Y,Gupta S,Valdmanis J A,et al. Terahertz attenuation and dispersion characteristics of coplanar transmission lines.IEEE Trans. Microwave Theory Tech.,1991,39: 910

    [7] Verghese S,Zamdmer N,Hu Q. An optical correlator using a low-temperature-grown GaAs photoconductor.Appl.Phys.Lett.,1996,69: 842

    [8] Zamdmer N,Hu Q, Mclntosh K A,et al. Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias.Appl.Phys.Lett.,1999,75: 2313

    [10] Gupta S,Frankel M Y, Valdmanis J A,et al. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperature.Appl. Phys.Lett.,1991,59: 3276

    [11] Weling A S,Heinz T F. Enhancement in the spectral irradiance of photoconducting terahertz emitters by chirped-pulse mixing.J.Opt.Soc.Am.B.,1999,16: 1455

    [12] Stellmacher M, Schnell J P, Adam D,et al. Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature. Appl.Phys.Lett.,1999,74: 1239

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. FEMTOSECOND PHOTO-CONDUCTIVE CHARACTERISTICS OF LT-GaAs[J]. Journal of Infrared and Millimeter Waves, 2001, 20(3): 179
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