• Acta Photonica Sinica
  • Vol. 50, Issue 10, 1004002 (2021)
Jun ZHENG1、2、*, Xiangquan LIU1、2, Mingming LI1、2, Zhi LIU1、2, Yuhua ZUO1、2, Chunlai XUE1、2, and Buwen CHENG1、2
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.3788/gzxb20215010.1004002 Cite this Article
    Jun ZHENG, Xiangquan LIU, Mingming LI, Zhi LIU, Yuhua ZUO, Chunlai XUE, Buwen CHENG. Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited)[J]. Acta Photonica Sinica, 2021, 50(10): 1004002 Copy Citation Text show less
    A germanium tin alloy with 22.3% tin composition by CVD epitaxy[5]
    Fig. 1. A germanium tin alloy with 22.3% tin composition by CVD epitaxy5
    Spectral response and imaging result of Ge0.80Sn0.20 photoconductor[22]
    Fig. 2. Spectral response and imaging result of Ge0.80Sn0.20 photoconductor22
    Schematic diagram and relationship between responsivity and wavelength under different bias voltages of the Ge0.89Sn0.11 photodiode[23]
    Fig. 3. Schematic diagram and relationship between responsivity and wavelength under different bias voltages of the Ge0.89Sn0.11 photodiode23
    Spectral response of Ge0.998Pb0.002 photodetector for different temperatures[14]
    Fig. 4. Spectral response of Ge0.998Pb0.002 photodetector for different temperatures14
    Optically pumped F-P cavity germanium tin laser[28,30-31]
    Fig. 5. Optically pumped F-P cavity germanium tin laser2830-31
    Optically pumped microdisk germanium tin laser[35]
    Fig. 6. Optically pumped microdisk germanium tin laser35
    Electrically pumped F-P cavity germanium tin laser[36]
    Fig. 7. Electrically pumped F-P cavity germanium tin laser36
    ReferencesSn composition /%StructureResponsivity /(A·W-1Cutoff wavelength /μm3⁃dB bandwidth /GHzYears
    2110PC1.63 @ 77 K,1.55 μm2.4/2014
    2211.5~20.0PC0.0067 @ 2 μm3.65/2019
    2311PIN0.32 @ 2 μm2.65/2018
    248MQW PIN0.11 @ 2 μm2.26/2020
    258MQW PIN0.015 @ 2 μm/>10 @ 2 μm2019
    264.9PIN0.014 @ 2 μm>2>30 @ 2 μm2021
    274.3WG PIN0.292 @ 1.8 μm1.95/2021
    Table 1. Structure and performance of GeSn photodetector
    ReferencesSn composition /%TypesLasing temperature /K

    Threshold/

    (kW·cm-2

    Years
    2812.6F⁃P<90325 @ 22 K2015
    2910.9F⁃P<11068 @ 10 K2016
    3011.9~17.5F⁃P<180920 @ 180 K2017
    3111~20F⁃P<27047 @ 77 K2019
    328~16F⁃P<2739 @ 25 K2019
    3312.5MD<130220 @ 50 K2016
    3413.3MD<12040 @ 20 K2018
    355.4MD

    <70 @ CL

    <100 @ PL

    1.1 @ 25 K,CL

    0.8 @ 25 K,PL

    2020
    3611F⁃P<100598 A/cm2 @ 10 K2020
    Table 2. Types and performance of GeSn lasers
    Jun ZHENG, Xiangquan LIU, Mingming LI, Zhi LIU, Yuhua ZUO, Chunlai XUE, Buwen CHENG. Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited)[J]. Acta Photonica Sinica, 2021, 50(10): 1004002
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