The bandgap of silicon-based germanium tin and germanium lead alloys can be adjusted with the composition, and can be transformed into a direct bandgap semiconductor material. It is an ideal material for developing silicon-based infrared luminescence and detector. This work first introduces the growth of germanium tin and germanium lead alloys, and then reviews the research progress of germanium tin optoelectronic devices. The germanium tin photodetector has developed towards high responsivity and long cut-off wavelength with increasing tin content. The research of germanium tin lasers is focused on low lasing threshold, high lasing temperature and electric pumping. In addition, this work also briefly introduces the research on germanium lead material and optoelectronic devices. With the development of silicon-based high-efficiency light sources and detectors, group IV alloys will continue to show important application value in the field of silicon-based infrared optoelectronic integration.