Long-wavelength GaInNAs vertical-cavity surface-emitting lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[1] Wiedenmann D,King R,Jung C,et al.Design and analysis of single-mode oxidized VCSEL's for high-speed optical interconnects [J].IEEE J.Select.Topics in Quantum Electron.,1999,5(3):503-511.

[2] Babic D I,Piprek J,Streubel K,et al.Design and analysis of double-fused 1.55 μm vertical-cavity lasers [J].IEEE J.Quantum Electron.,1997,33:1369-1383.

[3] Lin H C,Chua L C,Zhu H Z,et al.Photopumped long wavelength vertical-cavity surface-emitting lasers using strain-compensated multiple quantum wells [J].Appl.Phys.Lett.,1994,64(25):3395-3397.

[4] Kondow M,Uomi K,Niwa A,et al.GaInNAs:a novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].Japan.J.Appl.Phys.,1996,35:1273-1275.

[5] Jayaraman V,Goodnough T J,Beam T L,et al.Continous-wave operation of single-transverse-mode 1310 nm VCSELs up to 115 ℃ [J].IEEE Photonics Technol.Lett.,2000,12:1595-1597.

[6] Hall E,Nakagawa S,Almuneasu G,et al.Room temperature,CW operation of lattice-matched long-wavelength VCSELs [J].Electron.Lett.,2000,36:1465-1467.

[7] Lott J A,Ledentsov N N,Ustinov V M,et al.InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3μm [J].Electron.Lett.,2000,36:1384-1385.

[8] Larson M C,Kondow M,Kitatani T,et al.GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].IEEE Photonics Technol.Lett.,1998,10:188-190.

[9] Klem F J,Serkland K D,Geib M K.Advances in 1300 nm InGaAsN Quantum Well VCSELs [A].Proc.SPIE,2002,4646:137-144.

[10] Kageyama T,Miyamoto T,Makino S,et al.Room temperature continuous-wave operation of GaInNAs/GaAs VCSELS grown by chemcial beam epitaxy with output power exceeding 1 mW [J].Electron.Lett.,2001,37:225-226.

[11] Anan T,Yamada M,Nishi K,et al.Continous wave operation of 1.3 GaAsSb/GaAs VCSELs [J].Electron.Lett.,2001,37:566-567.

[12] Ramakrishnan A,Steinle G,Degen C et al.Electrically pumped 10 Gbit s-1 MOVPE grown monolithical 1.3 m VCSEL with GaInNAs active region Electron [J].Lett.,2002,38:1369-83.

[13] Coldren C W,Larson M C,Spruytte S G et al.1200nm GaAs Based Vertical Cavity Lasers Employing GaInNAs Multiple Quantum Well Active Regions [J].Electron.Lett.,2000,36:951-952.

[14] Jackson A W,Naone R L,Dalberth M J,et al.OC-48 capable InGaAsN vertical cavity lasers [J].Electron.Lett.,2001,37:355-356.

[15] Steinle G,Riechert H,Egorov A Yu.Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature [J].Electron.Lett.,2001,37:93-95.

[16] Ling Xianggan,Pan Zhong.Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells [J].Chin.Phys.Lett.,2002,19(8):1203-1206.