fT=220 GHz InAlN/GaN HFETs with regrown ohmic contacts

YIN Jia-Yun; LV Yuan-Jie; SONG Xu-Bo; TAN Xin; ZHANG Zhi-Rong; FANG Yu-Long; FENG Zhi-Hong; CAI Shu-Jun

doi:10.11972/j.issn.1001-9014.2017.01.002

[1] GONSCHOREK M, CARLIN J F, GRANDJE-AN N, et al. Two-dimensional electron gas dens-ity in Al1-xInxN/AlN/GaN heterostructures (0.03 ≤x≤0.23) ［J］. Journal of Applied Physics, 2008, 103:093714(1-5).

[2] MIZUTANI T, ITO M, KISHIMOTO S, AlGaN/ GaN HEMTs with thin InGaN cap layer for normally off operation ［J］. IEEE Electron Device Letters, 2007, 28(7):549-551.

[3] Pei Y, POBLENZ C, CORDON A L, et al. X-and Ka-band power performance of AlGaN/ GaN HEMTs grown by ammonia-MBE ［J］. IEEE Electroics Letters, 2008, 44(9): 598-599.

[4] MICOVIC M, KURDOGHLIAN A, BROWN D F, et al. 92-96 GHz GaN power amplifiers ［C］. IEEE MTT-S International, Canada, 2012: 1-3.

[5] BROWN D F, A WILLIAMS, SHINOHARA K, et al. W-band power performance of AlGaN/ GaN DHFETs with regrown n+ GaN ohmic contacts by MBE ［C］. IEEE Electron Devices Meeting (IEDM), Washington, 2011: 19.3.1- 19.3.4.

[6] KHAN M A, Chen Q, Sun C J, et al. Enhance-ment and depletion mode GaN/AlGaN hetero-structure field effect transistors ［J］. App-lied Physics Letters, 1996, 68(4): 514-516.

[7] CHUNG J W, HOKE W E, CHUMBES E M, et al. AlGaN/GaN HEMT With 300-GHz ［J］. IEEE Electron Device Letters, 2010, 31(3):195-197.

[8] KUZMK J., Power electronics on InAlN/(In)-GaN: Prospect for a record performance ［J］. IEEE Electron Device Letters, 2001, 22:510- 512.

[9] SUN H, ALT A R, BENEDICKTER H, et al. 205 GHz (Al,In)N/GaN HEMTs ［J］. IEEE Electron Device Letters, 2010, 31:293-295.

[10] SUN H, ALT A R, BENEDICKTER H, et al. 205-GHz (Al,In)N/GaN HEMTs ［J］. IEEE Electron Device Letters, 2010, 31(9):957-959.

[11] LEE D S, CHUNG J W, WANG H, et al. 245-GHz InAlN/GaN HEMTs with oxygen plasma treat-ment ［J］. IEEE Electron Device Letters, 2011, 32:755-757.

[12] LEE D S, GAO X, GUO S, et al. 300-GHz InAlN/ GaN HEMTs with InGaN back barrier ［J］. IEEE Electron Device Letters, 2011, 32:1525-1527.

[13] Yue Y, Hu Z, Guo J, et al. Ultrascaled InAlN/ GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz ［J］. Japanese Journal of Applied Physics, 2013, 52(8): 279- 287.

[14] Han T T, Dun S B, Lv Y J, et al. 70-nm-Gated InAlN/GaN HEMTs Grown on SiC Substrate with fT/fmax>160 GHz ［J］. Journal of Semi-conductors, 2016, accepted to be published.

[15] SHINOHARA K, REGAN D, CORRION A, et al. Self-aligned-gate GaN-HEMTs with heavily doped n+-GaN ohmic contacts to 2DEG ［C］. IEEE International Electron Devices Meeting, 2012, 48(11):27.2.1-27.2.4.

[16] Guo H Y, Lv Y J, Gu G D, et al. High Frequen-cy AlGaN/GaN High Electron Mobility Transi-stors with Regrown Ohmic Contacts by Metal Organic Chemical Vapor Deposition ［J］. Chin-ese Physics Letters, 2015, 32:118501 (1-3).

[17] CHEN G, KUMAR V, SCHWINDT R S, et al. Low Gate Bias Model Extraction Technique for AlGaN/ GaN HEMTs ［J］. IEEE Trans Micro Theory Tech, 2006, 54: 2949-2953.

[18] ARDARAVICˇIUS L, MATULIONIS A, LIBE-RIS J, et al. Electron drift velocity in AlGaN/ GaN channel at high electric fields ［J］. Journal of Applied Physics, 2009, 106(7): 073708(1-5).