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Acta Physica Sinica
Vol. 69, Issue 2, 028102-1 (2020)

Controllable growth of GeSi nanowires on trench patterned Si(001) substrate

Fei Gao^1、2, Qi Feng¹, Ting Wang¹, and Jian-Jun Zhang^1、*

Author Affiliations

¹Key Laboratory of Nanophysics and Device, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

²University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.7498/aps.69.20191407 Cite this Article

Fei Gao, Qi Feng, Ting Wang, Jian-Jun Zhang. Controllable growth of GeSi nanowires on trench patterned Si(001) substrate[J]. Acta Physica Sinica, 2020, 69(2): 028102-1 Copy Citation Text

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References

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Fei Gao, Qi Feng, Ting Wang, Jian-Jun Zhang. Controllable growth of GeSi nanowires on trench patterned Si(001) substrate[J]. Acta Physica Sinica, 2020, 69(2): 028102-1

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