Xian Chen, Jing Zhang, Zhao-Huan Tang. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale[J]. Acta Physica Sinica, 2019, 68(2): 026801-1
- Acta Physica Sinica
- Vol. 68, Issue 2, 026801-1 (2019)
Fig. 1. Schematic diagram of simulation of Si/Ge interface.Si/Ge界面模拟示意图
Fig. 2. Diagram of stress calculation of Si and Ge system.Si和Ge体系应力计算示意图
Fig. 3. Variation of stress at Si/Ge interface under different sizes of Ge.不同Ge尺寸下Si/Ge界面应力的变化
Fig. 4. Relationship between distance L Gstressand Ge when stress is relaxed to 200 MPa.
应力下降到200 MPa的位置与界面间距L Gstress与Ge尺寸的关系
Fig. 5. Effect of different point defect density on stress at Si/Ge interface in buffer layer.缓冲层缺陷密度对Si/Ge界面应力的影响
Fig. 6. Effect of different point defect density on the stress.不同密度的空位缺陷对应力的影响规律
Fig. 7. Relationship of the Si/Ge interface stress difference and the single defect interface stress difference with the defect density.Si/Ge界面应力差及单缺陷产生的应力差与缺陷密度的关系
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