Compact, submilliwatt, 2 &#215; 2 silicon thermo-optic switch based on photonic crystal nanobeam cavities

Huanying Zhou; Ciyuan Qiu; Xinhong Jiang; Qingming Zhu; Yu He; Yong Zhang; Yikai Su; Richard Soref

doi:10.1364/PRJ.5.000108

Journals >Photonics Research >Volume 5 >Issue 2 >Page 108 > Article

Photonics Research
Vol. 5, Issue 2, 108 (2017)

Compact, submilliwatt, 2 × 2 silicon thermo-optic switch based on photonic crystal nanobeam cavities

Huanying Zhou¹, Ciyuan Qiu^1、3、*, Xinhong Jiang¹, Qingming Zhu¹, Yu He¹, Yong Zhang¹, Yikai Su^1、4、*, and Richard Soref²

Author Affiliations

¹State Key Lab of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

²Engineering Department, University of Massachusetts, Boston, Massachusetts 02125, USA

³e-mail: qiuciyuan@sjtu.edu.cn

⁴e-mail: yikaisu@sjtu.edu.cn

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DOI: 10.1364/PRJ.5.000108 Cite this Article Set citation alerts

Huanying Zhou, Ciyuan Qiu, Xinhong Jiang, Qingming Zhu, Yu He, Yong Zhang, Yikai Su, Richard Soref. Compact, submilliwatt, 2 × 2 silicon thermo-optic switch based on photonic crystal nanobeam cavities[J]. Photonics Research, 2017, 5(2): 108 Copy Citation Text

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(a) Schematic diagram of the proposed 2×2 TO switch based on dual PCN cavities. The phase difference between the two arms (Φ1−Φ2) is equal to π. (b) Cross-section view of the coupled region in one half of the proposed 2×2 TO switch.

Fig. 1. (a) Schematic diagram of the proposed 2×2 TO switch based on dual PCN cavities. The phase difference between the two arms (Φ1−Φ2) is equal to π. (b) Cross-section view of the coupled region in one half of the proposed 2×2 TO switch.

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(a) Calculated electric field distribution of a single PCN 3W structure at the resonant wavelength based on 2.5D variational FDTD simulation. (b) Simulated transmission spectra of a single PCN 3W structure.

Fig. 2. (a) Calculated electric field distribution of a single PCN 3W structure at the resonant wavelength based on 2.5D variational FDTD simulation. (b) Simulated transmission spectra of a single PCN 3W structure.

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Fig. 3. (a) Micrograph of the fabricated 2×2 TO switch based on dual PCN 3W structures. (b) SEM image of the fabricated PCN 3W structure. (c) Device after wire bonding to a PCB.

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Fig. 4. Transmission spectra of a fabricated single PCN 3W structure in through (red solid), drop (green solid), and add (blue dash) ports. Note that the transmissions are normalized to a reference waveguide and the same to the below measured transmission spectra.

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Fig. 5. (a) Transmission spectra of the fabricated 2×2 TO switch based on dual PCN 3W structures with the unaligned wavelength state (solid lines) and the aligned wavelength state (lines with symbols). (b) Transmission spectra of the fabricated 2×2 TO switch based on dual PCN 3W structures with a π phase difference at through (red line)/drop (blue line)/add (green line) ports.

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Fig. 6. (a) Transmission spectra of the fabricated 2×2 TO switch based on dual PCN 3W structures with various applied powers (P1,P2,P3) at the through ports (solid lines) and the drop ports (lines with symbols). (b) Fitting curve of the resonance wavelength shift of 2×2 TO switch based on dual PCN 3W structures as a function of the applied power.

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Types	Device Footprint	Thermal Tuning Efficiency	Switching Power
Adiabatic bend-based MZI [28]	$\sim 5000 {μm}^{2}$	–	12.7 mW
MRR [29]	$\sim 400 {μm}^{2}$	0.25 nm/mW	3.3 mW
MZI [30]	$> 10000 {μm}^{2}$	–	30 mW
Dual MRRs [31]	$\sim 1000 {μm}^{2}$	0.9 nm/mW	6.8 mW
Photonic crystal [32]	$35 μm \times 10 μm$	0.63 nm/mW	18.2 mW
2D waveguide-based MZI [33]	$42 μm \times 42 μm$	–	26 mW
Our work	$30 μm \times 150 μm$	1.23 nm/mW	0.16 mW