• Acta Optica Sinica
  • Vol. 31, Issue 10, 1016004 (2011)
Cui Miao1、2、*, Zhou Taofei1, Zhang Jinping1, and Huang Xiaohui1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/aos201131.1016004 Cite this Article Set citation alerts
    Cui Miao, Zhou Taofei, Zhang Jinping, Huang Xiaohui. Influence of In Fraction on the Optical Properties of InGaN/GaN Blue Light-Emitting Diodes[J]. Acta Optica Sinica, 2011, 31(10): 1016004 Copy Citation Text show less
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    [5] Cui Desheng, Guo Weiling, Cui Bifeng et al.. Effects of human-body-mode electrostaticdischarge on GaN-based power light-emitting diode[J]. Acta Optica Sinica, 2011, 31(3): 0323004

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    [1] Yang Xiaodong. Semi-Polar Faceted InGaN/GaN Quantum Wells in Self-Organized GaN Islands for White Light Emission[J]. Chinese Journal of Lasers, 2013, 40(4): 406002

    [2] Lian Ruikai, Li Lin, Fan Yaming, Wang Yong, Deng Xuguang, Zhang Hui, Feng Lei, Zhu Jianjun, Zhang Baoshun. Effects of AlN Buffer Layer Thickness and Al Pre-Treatment on Properties of GaN/Si(111) Epilayer[J]. Chinese Journal of Lasers, 2013, 40(1): 106001

    Cui Miao, Zhou Taofei, Zhang Jinping, Huang Xiaohui. Influence of In Fraction on the Optical Properties of InGaN/GaN Blue Light-Emitting Diodes[J]. Acta Optica Sinica, 2011, 31(10): 1016004
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