• Acta Optica Sinica
  • Vol. 21, Issue 12, 1463 (2001)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InGaN Films Grown by Metalorganic Chemical Vapor Deposition[J]. Acta Optica Sinica, 2001, 21(12): 1463 Copy Citation Text show less
    References

    [1] Nakamura S, Senoh M, Iwasa N et al.. High-brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures. Jpn. J. Appl. Phys., 1995, 34(2):797~799

    [2] Nakamura S. Nichia announces laser commercialization. Internet MRS J. Nitride Semicond. Nitride News, http://nsr.mij.mrs.org., 1999

    [3] OsamuraK. Preparation and optical properties of GaxIn1-xN thin films. J. Appl. Phys., 1975, 46(8):3432~3437

    [4] Nakamura S, Mukai T. High-quality InGaN films grown on GaN films. Jpn. J. Appl. Phys., 1992, 31(2):1457~1459

    [5] Mcciuskey M D, van de Walle C G, Master C P et al.. Large band gap bowing of InxGa1-xN alloys. Appl. Phys. Lett., 1998, 72(21):2725~2726

    [8] Yoshimoto N, Matsuoka T, Sasaki T et al.. Photoluminescence of InGaN films grown at high temperature by metaloganic vapor phase epitaxy. Appl. Phys. Lett., 1991, 59(18):2251~2253

    [9] Keller S, Keller B P, Kapolnek D et al.. Growth and characterization of bulk InGaN films and quatum wells. Appl. Phys. Lett., 1996, 68(22):3147~3149

    [10] Koukitu A, Takahashi N, Taki T et al.. Thermodynamic analysis of InxGa1-xN alloy composition grown by metalorganic vapor phase epitaxy. Jpn. J. Appl. Phys., 1996, 35(2):673~676

    [11] Lin H C, Shu C K, Ou J et al.. Growth temperature effects on InxGa1-xN films studied by X-ray and photoluminescence. J. Crystal. Growth., 1998, 189/190:57~60

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InGaN Films Grown by Metalorganic Chemical Vapor Deposition[J]. Acta Optica Sinica, 2001, 21(12): 1463
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