High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration

Jinfeng Mu; Meindert Dijkstra; Jeroen Korterik; Herman Offerhaus; Sonia M. García-Blanco

doi:10.1364/PRJ.401055

Journals >Photonics Research >Volume 8 >Issue 10 >Page 1634 > Article

Photonics Research
Vol. 8, Issue 10, 1634 (2020)

High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration | On the Cover

Jinfeng Mu^*, Meindert Dijkstra, Jeroen Korterik, Herman Offerhaus, and Sonia M. García-Blanco

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Optical Sciences Group, MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands

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DOI: 10.1364/PRJ.401055 Cite this Article Set citation alerts

Jinfeng Mu, Meindert Dijkstra, Jeroen Korterik, Herman Offerhaus, Sonia M. García-Blanco, "High-gain waveguide amplifiers in Si₃N₄ technology via double-layer monolithic integration," Photonics Res. 8, 1634 (2020) Copy Citation Text

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