Due to the different internal driving voltages required by the computing-in-memory array of flash memory in the working mode, an adjustable charge pump for the array was designed based on various Dickson charge pump. A new cross-coupled design was adopted for the output stage to reduce the low pumping efficiency caused by the threshold voltage of the last stage in traditional charge pump. At the same time, the auxiliary MOS transistor was used to enhance the ability of the body-source diode in the traditional charge pump to suppress reverse leakage. The simulation results in a 55 nm CMOS process show that compared with the traditional charge pump, the reverse leakage of the intermediate stage is reduced by 17.5%, and the reverse leakage of the output stage is reduced by 73.1 % under a power supply voltage of 1.8 V and a working current of 300 μA. The maximum output voltage of the main charge pump is 9.56 V, and the voltage efficiency is 88.51% without feedback regulation. In the PFM adjustable mode, the reconfigurable charge pump can realize output voltage switching.