Black silicon is widely used in making solar cells and infrared detectors due to its excellent optical absorption property. The detectors made by black silicon have the advantages of high spectral responsivity, wide range and flat spectral response. The research progress of black silicon infrared detectors at home and aboard is introduced, and the involved fabrication methods of black silicon are introduced including femtosecond laser irradiation, picosecond laser irradiation, wet etching, and ion implantation combined with excimer nanosecond laser irradiation. The problems in making black silicon infrared detectors are discussed, including the tremendous decrease of absorption efficiency, during annealing and the difficulty in making electrode on black silicon surface as well as the inferior characteristic of carrier transverse transporting. At the same time, the current solutions of these problems are summarized. The existing problems are analyzed, and the trends and prospect in the developing application of black silicon infrared detectors are also predicted.