Second Order Nonlinear Optical Effect in Ge-As-S System under the Electron-Beam

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 21 >Issue 6 >Page 683 > Article

Acta Optica Sinica
Vol. 21, Issue 6, 683 (2001)

Second Order Nonlinear Optical Effect in Ge-As-S System under the Electron-Beam

[in Chinese]¹, [in Chinese]², [in Chinese]¹, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Second Order Nonlinear Optical Effect in Ge-As-S System under the Electron-Beam[J]. Acta Optica Sinica, 2001, 21(6): 683 Copy Citation Text

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Abstract

The method of Maker fringes was used and the second order nonlinear optical effect was observed in the electron-beam irradiated Ge-As-S glasses. The mechanism of this effect was discussed. It′s shown from the Maker fringes that the second harmonic intensity is strongly related to accelerating voltage, which gets a peak when the incidence of angle is ±(50°～60°).

Keywords

electron-beam irradiation four-wave mixing frequency second order nonlinear optical effect Ge-As-S chalcogenide glass

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Second Order Nonlinear Optical Effect in Ge-As-S System under the Electron-Beam[J]. Acta Optica Sinica, 2001, 21(6): 683

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