• Acta Optica Sinica
  • Vol. 19, Issue 10, 1430 (1999)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
  • show less
    DOI: Cite this Article Set citation alerts
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. ZnS:Sm, Cl Red Thin Film Electroluminescent Devices with Ceramic Thick Film as Insulator Layer[J]. Acta Optica Sinica, 1999, 19(10): 1430 Copy Citation Text show less
    References

    [1] Wu W X, Dalacu N, Kitai A H. Contrast enhancement for ceramic insulator electroluminescent devices. J. Electrochem. Soc., 1990, 137(9):2987~2989

    [2] Wu X, Bailey P, Carkner D E et al.. Hybrid electroluminescent devices incorporating thick and thin film technologies. In: Xurong Xu. ed. Proc. 1994 Intern. Workshop on EL, Beijing, Science Press, 1994. 232~237

    [3] Bailey P, Carkner D, Wu X. Trailing edge light emission from ZnS:Mn and ZnS:Tb, F in a thick dielectric electroluminescent display. J. Appl. Phys., 1997, 81(2):931~936

    [10] Kato A, Katayama M, Mizntani A et al.. Satellite peak generation in the electroluminescent spectrum of ZnS:Sm grown by metal organic chemical vapor deposition with Cl codoping. J. Appl. Phys., 1994, 76(5):3206~3208

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. ZnS:Sm, Cl Red Thin Film Electroluminescent Devices with Ceramic Thick Film as Insulator Layer[J]. Acta Optica Sinica, 1999, 19(10): 1430
    Download Citation