• Infrared and Laser Engineering
  • Vol. 50, Issue 7, 20211052 (2021)
Bing Xiong, Enfei Chao, Yi Luo, Changzheng Sun, Yanjun Han, Jian Wang, Zhibiao Hao, Lai Wang, and Hongtao Li
Author Affiliations
  • Beijing National Research Center for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
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    DOI: 10.3788/IRLA20211052 Cite this Article
    Bing Xiong, Enfei Chao, Yi Luo, Changzheng Sun, Yanjun Han, Jian Wang, Zhibiao Hao, Lai Wang, Hongtao Li. Research on ultra-wideband and high saturation power uni-traveling carrier photodetectors (Invited)[J]. Infrared and Laser Engineering, 2021, 50(7): 20211052 Copy Citation Text show less
    Epitaxy structure of our DDL-UTC-PD (a) and (b) energy band diagram of PD under reverse bias
    Fig. 1. Epitaxy structure of our DDL-UTC-PD (a) and (b) energy band diagram of PD under reverse bias
    Electric field distribution within the device under various reverse biases. (a) Typical UTC-PD; (b) DDL-UTC-PD
    Fig. 2. Electric field distribution within the device under various reverse biases. (a) Typical UTC-PD; (b) DDL-UTC-PD
    (a) Frequency response at photocurrent of 10 mA; (b) 3 dB bandwidth at different reverse biases
    Fig. 3. (a) Frequency response at photocurrent of 10 mA; (b) 3 dB bandwidth at different reverse biases
    Voltage-dependent saturation characteristics at 105 GHz
    Fig. 4. Voltage-dependent saturation characteristics at 105 GHz
    Epitaxial structure of MUTC-PD for optimization
    Fig. 5. Epitaxial structure of MUTC-PD for optimization
    Transit-time-limited bandwidth varies with thickness of depleted absorber
    Fig. 6. Transit-time-limited bandwidth varies with thickness of depleted absorber
    Circuit model for frequncy response simulation
    Fig. 7. Circuit model for frequncy response simulation
    Tuning effects of high impedance transmission line on frequency response
    Fig. 8. Tuning effects of high impedance transmission line on frequency response
    Optical microscopic photo of fabricated PD
    Fig. 9. Optical microscopic photo of fabricated PD
    Measurement results of frequency response of 4.5 μm-diameter PD
    Fig. 10. Measurement results of frequency response of 4.5 μm-diameter PD
    Bing Xiong, Enfei Chao, Yi Luo, Changzheng Sun, Yanjun Han, Jian Wang, Zhibiao Hao, Lai Wang, Hongtao Li. Research on ultra-wideband and high saturation power uni-traveling carrier photodetectors (Invited)[J]. Infrared and Laser Engineering, 2021, 50(7): 20211052
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