Yalei Zhang, Yunping Lan, Jiayuan Han, Hongrong Zhang, Yonggang Zou. Influence of Wet Etching Passivation on Surface Properties of Gallium Arsenide[J]. Chinese Journal of Lasers, 2024, 51(16): 1602208
- Chinese Journal of Lasers
- Vol. 51, Issue 16, 1602208 (2024)
Fig. 1. PL spectra of samples etched by different acid solutions
Fig. 2. Effects of acid etching time and ODT-free solution on passivation. (a) PL spectra; (b) test maps by fast fluorescence spectrometer
Fig. 3. SEM images. (a) GaAs substrate; (b) B4
Fig. 4. Effects of acid concentration in H2SO4 solution and H2O2-free solution on passivation. (a) PL spectra; (b) test maps by fast fluorescence spectrometer
Fig. 5. Analysis results by Raman system. (a) GaAs substrate; (b) C2
Fig. 6. Test results by EDS. (a) GaAs substrate; (b) C2
Fig. 7. SEM and AFM morphologies. (a) C2, SEM; (b) C3, SEM; (c) GaAs substrate, AFM; (d) C2, AFM; (e) C3, AFM
Fig. 8. Test results for stability of passivation layer. (a) PL spectra; (b) test maps by fast fluorescence spectrometer
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Table 1. Experimental scheme for acid etching
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Table 2. Experimental scheme for effects of acid etching time and ODT-free solution on passivation
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Table 3. Experimental scheme for effects of acid concentration in H2SO4 solution and H2O2-free solution on passivation
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