• High Power Laser and Particle Beams
  • Vol. 32, Issue 7, 075001 (2020)
Chang Liu1、2, Falun Song1、*, Mingdong Zhu1、3, Chunxia Li1, Beizhen Zhang1, Fei Li1, Ganping Wang1, Haitao Gong1, Yanqing Gan1, and Xiao Jin1
Author Affiliations
  • 1Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China
  • 2Graduate School of China Academy of Engineering Physics, Beijing 100088, China
  • 3China State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China
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    DOI: 10.11884/HPLPB202032.200045 Cite this Article
    Chang Liu, Falun Song, Mingdong Zhu, Chunxia Li, Beizhen Zhang, Fei Li, Ganping Wang, Haitao Gong, Yanqing Gan, Xiao Jin. Influence of nitrogen ion implantation on surface charge accumulation and dissipation of polytetrafluoroethylene[J]. High Power Laser and Particle Beams, 2020, 32(7): 075001 Copy Citation Text show less
    Plasma immersion ion implantation system
    Fig. 1. Plasma immersion ion implantation system
    Surface potential measurement system
    Fig. 2. Surface potential measurement system
    XPS energy spectra of PTFE samples at different RF power and different processing time
    Fig. 3. XPS energy spectra of PTFE samples at different RF power and different processing time
    XPS energy spectrum of element C of some PTFE samples
    Fig. 4. XPS energy spectrum of element C of some PTFE samples
    XPS energy spectra of element N of some PTFE samples
    Fig. 5. XPS energy spectra of element N of some PTFE samples
    FTIR spectra of PTFE samples under different RF power and processing time
    Fig. 6. FTIR spectra of PTFE samples under different RF power and processing time
    Relationship between water contact angle of PTFE sample surface,RF power,and processing time
    Fig. 7. Relationship between water contact angle of PTFE sample surface,RF power,and processing time
    Relationship between surface resistivity of PTFE samples and RF power and processing time
    Fig. 8. Relationship between surface resistivity of PTFE samples and RF power and processing time
    Decay curve of surface central potential with time for PTFE samples under different RF power and processing time
    Fig. 9. Decay curve of surface central potential with time for PTFE samples under different RF power and processing time
    Normalized decay curve of surface center potential of PTFE samples with different RF power and processing time
    Fig. 10. Normalized decay curve of surface center potential of PTFE samples with different RF power and processing time
    Distribution curve of trap level on PTFE sample surface under different RF power and processing time
    Fig. 11. Distribution curve of trap level on PTFE sample surface under different RF power and processing time
    RF power/Wprocessing time/hproportion/%
    CC=OCFCF2CF3
    0031.18.41.458.20.8
    200132.25.31.559.51.6
    200217.45.32.172.92.2
    400216.65.02.169.56.7
    Table 1. Proportion of content of element C in PTFE sample surface before and after ion implantation
    RF power/Wprocessing time/hsurface trap level/eVsurface trap density/(1020eV−1·m−3
    000.7569.82
    20010.7549.19
    20020.7558.56
    40020.7357.04
    Table 2. Energy level and density of traps on the surface of PTFE samples under different RF power and processing time
    Chang Liu, Falun Song, Mingdong Zhu, Chunxia Li, Beizhen Zhang, Fei Li, Ganping Wang, Haitao Gong, Yanqing Gan, Xiao Jin. Influence of nitrogen ion implantation on surface charge accumulation and dissipation of polytetrafluoroethylene[J]. High Power Laser and Particle Beams, 2020, 32(7): 075001
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