Study on measuring system for minority carrier lifetime

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 30 >Issue 3 >Page 226 > Article

Infrared and Laser Engineering
Vol. 30, Issue 3, 226 (2001)

Study on measuring system for minority carrier lifetime

[in Chinese]^*, [in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

[in Chinese]

show less

DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on measuring system for minority carrier lifetime[J]. Infrared and Laser Engineering, 2001, 30(3): 226 Copy Citation Text

show less

References

[3] C NGUYEN VAN HUONG, Triboulet R, Lemasson P. Ag and Deposits on HgxTe (x=Cd,Zn) Alloys. J Cryst Growth, 1990, 101:311～317.

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on measuring system for minority carrier lifetime[J]. Infrared and Laser Engineering, 2001, 30(3): 226

Download Citation

Tools

Save the article for my favorites

Paper Information