[1] R. Sankaralingam, P. Fay. Drift-enhanced dual-absorption PIN photodiodes[J]. IEEE Photon. Technol. Lett., 2005, 17(7): 1513～1515

[2] R. Sankaralingam, P. Fay. High bandwidth-efficiency long-wavelength PIN photodiodes[C]. International Conference on Indium Phosphide and Related Materials, 2005. 152～155

[3] F. J. Effenberger, A. M. Joshi. Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector[J]. Lightwave Technol., 1996, 14(8): 1859～1864

[4] Peng Fu, Yongqing Huang, Xiaofeng Duan et al..A novel dual-absorption resonant cavity enhanced photodetectors[C]. Technical Digest, Optical Society of America (2009), paper WL42

[5] Yang Yisu, Huang Yongqing, Huang Hui et al.. Design of photodetector with subwavelength grating structure ［J］. Chinese J. Lasers, 2009, 36(9): 2352～2357

[6] S. V. Gryshchenko, H. H. Demina, V. V. Lysak. Quantum efficiency and reflection in resonant cavity photodector with anomalous dispersion mirror[C]. CAOL, 2008. 229～232

[7] Xie Yuan, Wang Yana, Liu Wei et al.. Comparative study on GaAs photoconductive semiconductor switches［J］. Laser & Optoelectronics Progress, 2010, 47(6)：063201

[8] Ni Zhengji, Chen Lin, Wang Shuling et al.. Electrons intervalley transfer gain in bulk GaAs［J］. Chinese J. Lasers, 2010, 37(3): 658～662