• Chinese Journal of Lasers
  • Vol. 48, Issue 19, 1914003 (2021)
Longqing Cong*
Author Affiliations
  • Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
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    DOI: 10.3788/CJL202148.1914003 Cite this Article Set citation alerts
    Longqing Cong. Active Terahertz Metadevices[J]. Chinese Journal of Lasers, 2021, 48(19): 1914003 Copy Citation Text show less
    Active terahertz metamaterial modulators integrated with liquid crystals. (a) Active terahertz modulator with broadband and large modulation depth by switching the operation regime between Brewster angle and total reflection angle[14]; (b)(c) liquid crystal integrated with perfect absorber metamaterials[17-18]; (d) programmable metasurface integrated with liquid crystals[19]; (e) liquid crystal metasurface working in transmission mode[20]
    Fig. 1. Active terahertz metamaterial modulators integrated with liquid crystals. (a) Active terahertz modulator with broadband and large modulation depth by switching the operation regime between Brewster angle and total reflection angle[14]; (b)(c) liquid crystal integrated with perfect absorber metamaterials[17-18]; (d) programmable metasurface integrated with liquid crystals[19]; (e) liquid crystal metasurface working in transmission mode[20]
    Active terahertz metamaterial modulators based on MEMS. (a) Active polarization modulator with comb drive actuators[29]; (b) SEM image of a simple bimorph cantilever[34]; (c) chiral switches actuated by electricity or pressure difference[42-43]; (d) programmable binary chiral modulator with metamolecules[34]; (e) coupling regime switchable terahertz cavity with electric actuation[32]; (f) programmable terahertz spatial light modulator with electric actuation[33]
    Fig. 2. Active terahertz metamaterial modulators based on MEMS. (a) Active polarization modulator with comb drive actuators[29]; (b) SEM image of a simple bimorph cantilever[34]; (c) chiral switches actuated by electricity or pressure difference[42-43]; (d) programmable binary chiral modulator with metamolecules[34]; (e) coupling regime switchable terahertz cavity with electric actuation[32]; (f) programmable terahertz spatial light modulator with electric actuation[33]
    Active terahertz metamaterial modulators with semiconductors. (a) All-optical Si-metamaterial amplitude modulator[49]; (b) ultrafast all-optical Si-metamaterial polarizing beam splitter[53]; (c) all-optical modulation of all-dielectric metamaterial absorber[63]; (d) high Q bound state in the continuum excited with all-dielectric metamaterials and all-optical modulation of the mode[66]; (e) Huygens’ dielectric metasurface for active angle deflection[68]
    Fig. 3. Active terahertz metamaterial modulators with semiconductors. (a) All-optical Si-metamaterial amplitude modulator[49]; (b) ultrafast all-optical Si-metamaterial polarizing beam splitter[53]; (c) all-optical modulation of all-dielectric metamaterial absorber[63]; (d) high Q bound state in the continuum excited with all-dielectric metamaterials and all-optical modulation of the mode[66]; (e) Huygens’ dielectric metasurface for active angle deflection[68]
    Active terahertz metamaterial modulators based on graphene. (a) Broadband terahertz modulation by directly biasing graphene layer[87]; (b) enhancing modulation depth by dual pumping of electrical and optical stimuli[89]; (c) larger modulation depth by operating at Brewster angle[90]; (d) modulating plasmonic resonance frequency of patterned graphene[91]; (e) flexible graphene modulator with metamaterials and flexible dielectric[96]; (f) improved modulation depth with metamaterials and application in single pixel imaging[97]
    Fig. 4. Active terahertz metamaterial modulators based on graphene. (a) Broadband terahertz modulation by directly biasing graphene layer[87]; (b) enhancing modulation depth by dual pumping of electrical and optical stimuli[89]; (c) larger modulation depth by operating at Brewster angle[90]; (d) modulating plasmonic resonance frequency of patterned graphene[91]; (e) flexible graphene modulator with metamaterials and flexible dielectric[96]; (f) improved modulation depth with metamaterials and application in single pixel imaging[97]
    Active metamaterial devices based on phase change materials, superconductors, nonlinear effect, diodes, transistors, and chemical reactions. (a) Terahertz nonlinear effect realized by integrating metamaterial with VO2[102]; (b) laser writing patterns on GST film for rewritable optical devices[100]; (c) active metamaterial with high quality factor fabricated with YBCO film[109]; (d) ultrafast polarization modulation by second order nonlinearity of gold surface[115]; (e) programmable modulation by integrating with diodes[117]; (f) GHz super-fast programmable modulation by integrating with transistors[118]; (g) dynamic optical modulation by reversible chemical reaction of Mg and hydrogen[119]
    Fig. 5. Active metamaterial devices based on phase change materials, superconductors, nonlinear effect, diodes, transistors, and chemical reactions. (a) Terahertz nonlinear effect realized by integrating metamaterial with VO2[102]; (b) laser writing patterns on GST film for rewritable optical devices[100]; (c) active metamaterial with high quality factor fabricated with YBCO film[109]; (d) ultrafast polarization modulation by second order nonlinearity of gold surface[115]; (e) programmable modulation by integrating with diodes[117]; (f) GHz super-fast programmable modulation by integrating with transistors[118]; (g) dynamic optical modulation by reversible chemical reaction of Mg and hydrogen[119]
    PerformanceSi+LC RDP94 990+Si[14] Metamaterialabsorber+LC5 CB[17]Metamaterialabsorber+LCLCMS-1107[18]Metamaterialabsorber+LCNJU-LDN-4[19]Double-layermetamaterial+LC1825[20]
    Voltage /V1204154020
    Modulation depth /%99.63075Frequency shiftFrequency shift
    Thickness of LC /μm500Absorber thickness502512
    Actuation frequency / kHz<0.001<1<10.11
    Refraction indexno =1.57+0.025ine =1.74+0.025iΔn=0.17no =1.82n4v =2.01Δn=0.19no =1.5+0.15ine =1.85 +0.12iΔn=0.35no =1.87ne =1.57Δn =0.3no =1.554+0.15ine =1.941+0.15iΔn=0.387
    Operation modeTransmissionReflectionReflectionReflectionTransmission
    Table 1. Performance of liquid crystal based metamaterials