Aluminum and lanthanum doped zinc oxide transparent conductive films were prepared by sol-gel dip-coating method, all the films were annealed under reducing atmosphere (VN2VH2=964). The effect of the aluminum doping concentration and the annealing temperature on the microstructure, optical and electrical properties of the ZnO(Al,La) films were investigated by a D/Max 2500 X-ray diffractometer (XRD) with CuKα radiation, a Hitachi S-4700 field-emission scanning electron microscope (FE-SEM), UV-2110 spectrophotometer and SDY-5 four-point probe instrument. The results showed that with the annealing temperature increasing, the film grew more preferentially along the (002) plane of the film, the average grain size increased, the electrical resistivity decreased and the optical transmittance increased; With the Al doping concentration increasing, the diffraction intensity of the films which were annealed at high temperature was high, the average grain size decreased, the porous morphology of the films increased, the electrical resistivity decreased, after up to 1%, the electrical resistivity increased with Al doping mole fraction. The average optical transmittance of the best film is more than 85% in the visible region and the electrical resistivity is as low as 1.78×10-3 Ω·cm, it was obtained under the Al doping concentration 1% and annealing temperature 550 ℃.