Zinc oxide films are deposited on silicon substrate by reactive pulsed laser deposition of zinc target. The effect of substrate temperatures on the crystal and band edge luminescence is studied using X-ray diffraction,scanning electron microscopy,Raman spectra and photoluminescence. The results show that the films deposited at 300 ℃ had the highest c-axis preferred orientation,and with increase of the substrate temperature the full width of half maximum decreases,and the grain size increases. The films deposited at 400 ℃ have the equiaxed crystallites. Meanwhile,the result of Raman spectra shows that the defects in films deposited at various substrate temperature has no obvious differene,and exhibits tensile strain which is the smallest in the films deposited at 400 ℃. The films deposited at 400 ℃ exhibits most intense UV emission and the weakest green-yellow emission. Therefore,the equiaxed crystallites can improve the photoluminescence property with less defects and tensile strain in the films.