InGaN/GaN superlattice (SL) barrier near p- GaN and n- GaN are designed to replace the conventional GaN barrier of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). The lightvoltage performance curves, electroluminescence (EL) characteristics, energy band diagrams, electron concentration and radiative recombination rate of LEDs with SL barrier near p- GaN and n- GaN have been studied numerically. The results indicate that the InGaN/GaN LED with SL barrier near n- GaN improves light output performance mane than that near p- GaN. The improved performance is due to the enhanced injection efficiency of electrons and radiative recombination rate.