• Optoelectronics Letters
  • Vol. 12, Issue 5, 340 (2016)
Pan CHENG, Feng-jing YANG, Zi-zhong ZHOU, Bo HUANG, Li-bo WU, and Ya-xun ZHOU*
Author Affiliations
  • College of Information Science and Engineering, Ningbo University, Ningbo 315211, China
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    DOI: 10.1007/s11801-016-6145-8 Cite this Article
    CHENG Pan, YANG Feng-jing, ZHOU Zi-zhong, HUANG Bo, WU Li-bo, ZHOU Ya-xun. Enhancement of 2.0 μm fluorescence emission in new Ho3+/Tm3+/Yb3+tri-doped tellurite glasses[J]. Optoelectronics Letters, 2016, 12(5): 340 Copy Citation Text show less

    Abstract

    For enhancing the 2.0 μm band fluorescence of Ho3+, a certain amount of WO3oxide was introduced into Ho3+/Tm3+/Yb3+tri-doped tellurite glass prepared using melt-quenching technique. The prepared tri-doped tellurite glass was characterized by the absorption spectra, fluorescence emission and Raman scattering spectra, together with the stimulated absorption, emission cross-sections and gain coefficient. The research results show that the introduction of WO3oxide can further improve the 2.0 μm band fluorescence emission through the enhanced phonon-assisted energy transfers between Ho3+/Tm3+/Yb3+ions under the excitation of 980 nm laser diode (LD). Meanwhile, the maximum gain coefficient of Ho3+at 2.0 μm band reaches about 2.36 cm-1. An intense 2.0 μm fluorescence emission can be realized .
    CHENG Pan, YANG Feng-jing, ZHOU Zi-zhong, HUANG Bo, WU Li-bo, ZHOU Ya-xun. Enhancement of 2.0 μm fluorescence emission in new Ho3+/Tm3+/Yb3+tri-doped tellurite glasses[J]. Optoelectronics Letters, 2016, 12(5): 340
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