• Infrared and Laser Engineering
  • Vol. 52, Issue 2, 20210870 (2023)
Weijing Zhou, Ming Wen, Hao Chang*, Yifu Chen..., Gang Ji, Yingjie Ma, Zhilong Jian and Yujie Liao|Show fewer author(s)
Author Affiliations
  • State Key Laboratory of Laser Propulsion & Its Application, Department of Aerospace Science and Technology, Space Engineering University, Beijing 101416, China
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    DOI: 10.3788/IRLA20210870 Cite this Article
    Weijing Zhou, Ming Wen, Hao Chang, Yifu Chen, Gang Ji, Yingjie Ma, Zhilong Jian, Yujie Liao. Damage characteristics of solar cells irradiated by picosecond pulsed lasers (invited)[J]. Infrared and Laser Engineering, 2023, 52(2): 20210870 Copy Citation Text show less
    Construction of the experiment system
    Fig. 1. Construction of the experiment system
    Typical three-junction GaInP2/GaAs/Ge battery sample
    Fig. 2. Typical three-junction GaInP2/GaAs/Ge battery sample
    Distribution of metal grid electrodes on the surface of solar cell
    Fig. 3. Distribution of metal grid electrodes on the surface of solar cell
    Changes of I-V characteristics of three-junction GaInP2/GaAs/Ge battery at non-grid line under picosecond laser irradiation
    Fig. 4. Changes of I-V characteristics of three-junction GaInP2/GaAs/Ge battery at non-grid line under picosecond laser irradiation
    Characteristics of maximum electrical output power of three-junction GaInP2/GaAs/Ge battery vs voltage at the non-grid line under picosecond laser irradiation
    Fig. 5. Characteristics of maximum electrical output power of three-junction GaInP2/GaAs/Ge battery vs voltage at the non-grid line under picosecond laser irradiation
    Characteristics of maximum electrical output power of three-junction GaInP2/GaAs/Ge battery vs laser power at non-grid line under picosecond laser irradiation
    Fig. 6. Characteristics of maximum electrical output power of three-junction GaInP2/GaAs/Ge battery vs laser power at non-grid line under picosecond laser irradiation
    Changes of surface damage morphology of three-junction GaInP2/GaAs/Ge cell at non-grid line under picosecond laser irradiation
    Fig. 7. Changes of surface damage morphology of three-junction GaInP2/GaAs/Ge cell at non-grid line under picosecond laser irradiation
    Changes of electroluminescence characteristics at the non-grid parts of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Fig. 8. Changes of electroluminescence characteristics at the non-grid parts of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Changes of relatively luminous intensity at non-grid line of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser
    Fig. 9. Changes of relatively luminous intensity at non-grid line of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser
    Changes of I-V characteristics of gate line of three-junction GaInP2/GaAs/Ge battery irradiated by picosecond laser
    Fig. 10. Changes of I-V characteristics of gate line of three-junction GaInP2/GaAs/Ge battery irradiated by picosecond laser
    Characteristics of maximum output power at grid line of three-junction GaInP2/GaAs/Ge battery vs voltage irradiated by picosecond pulse laser
    Fig. 11. Characteristics of maximum output power at grid line of three-junction GaInP2/GaAs/Ge battery vs voltage irradiated by picosecond pulse laser
    Changes of maximum output electric power at grid line of three-junction GaInP2/GaAs/Ge battery irradiated by picosecond laser
    Fig. 12. Changes of maximum output electric power at grid line of three-junction GaInP2/GaAs/Ge battery irradiated by picosecond laser
    Changes of grid lines of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Fig. 13. Changes of grid lines of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Electroluminescent changes of grid lines of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Fig. 14. Electroluminescent changes of grid lines of three-junction GaInP2/GaAs/Ge cells irradiated by picosecond laser
    Characteristics of relatively luminous intensity change with laser power after multi-pulse irradiation of picosecond pulse laser on the grid electrode of three-junction GaInP2/GaAs/Ge battery
    Fig. 15. Characteristics of relatively luminous intensity change with laser power after multi-pulse irradiation of picosecond pulse laser on the grid electrode of three-junction GaInP2/GaAs/Ge battery
    Laser power/mW1.5151501500375015000
    Reduction of battery power3.4%17.2%27.6%27.6%37.9%48.3%
    Table 1. Maximum power reduction of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser at the non-grid line area
    Laser power/mW0.150.751.515150
    Reduction of battery power3.4%65.5%75.9%94.1%94.8%
    Table 2. Maximum power reduction of three-junction GaInP2/GaAs/Ge cell irradiated by picosecond laser at the grid line area
    Weijing Zhou, Ming Wen, Hao Chang, Yifu Chen, Gang Ji, Yingjie Ma, Zhilong Jian, Yujie Liao. Damage characteristics of solar cells irradiated by picosecond pulsed lasers (invited)[J]. Infrared and Laser Engineering, 2023, 52(2): 20210870
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